Parameter-Centric Scaled FET Device - E-book

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Parameter-centric Scaled Fet Devices - ENG

Physics Based Perspectives And Attributes

Nabil Shovon Ashraf

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$900.00

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Sinopsis

ISBN:	9783031842863
Formato:	ePub
Idioma:	Inglés
Editorial:	Springer Nature
Tema:	Ciencia
Subtema:	Ciencias Aplicadas
Año de publicación:	2025-03-26

Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed.

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