The Source/Drain Engineering of Nan - E-book

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The Source/drain Engineering Of Nanoscale Germanium-based Mos Devices - ENG

Zhiqiang Li

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Sinopsis

ISBN:	9783662496831
Formato:	Page Fidelity
Idioma:	Inglés
Editorial:	Springer Nature
Tema:	Tecnología e ingeniería
Subtema:	Eletrónica semicondutores
Año de publicación:	2016-03-24

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With Â adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600â„ƒ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8Ã—10âˆ’7Î©â€¢cm2, respectively. Besides, a reduced Â source/drain parasitic resistance is demonstrated in the Â fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

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